Ultraviolet lasing with low excitation intensity in deep-level emission free ZnO films
Date
2005
Authors
Wang, Rongping
Muto, H
Gang, X
Jin, P
Tazawa, M
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Publisher
Elsevier
Abstract
We have prepared high-quality zinc oxide (ZnO) films by using laser ablation and magnetron sputtering. The deep-level emission free spectra have been obtained for ZnO films on both sapphire and fused silica. It was found that the stimulated emission and band-edge emission were sensitive to the quality of the ZnO films. Strong band-edge emission can be achieved and the stimulated emission can be excited at low threshold excitation density of 7 W/cm 2 in single crystal ZnO films. By using special devised optical geometry, we have proved that the traditional resonant cavity is not imperative to form the lasing and that in-plane closed loop paths via multiple scattering between crystalline grains seems more suitable to account for the lasing mechanism.
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Keywords
Keywords: Crystal lattices; Excitons; Laser ablation; Light emitting diodes; Magnetron sputtering; Photoluminescence; Semiconductor materials; Zinc compounds; Deep-level emissions; Laser epitaxy; Optical geometry; Ultraviolet light-emitting devices; Zinc oxide A3. Laser epitaxy; B1. Zinc compounds; B2. Semiconducting II-VI materials
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Source
Journal of Crystal Growth
Type
Journal article
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2037-12-31
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