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Compound Semiconductor Nanowires for Optoelectronic Device Applications

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Date

2011

Authors

Gao, Qiang
Joyce, Hannah J
Paiman, Suriati
Kang, Jung-Hyun
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE Photonics Society

Abstract

GaAs, InAs and InP based nanowires were grown epitaxially on (111)B substrates by metalorganic chemi-cal vapor deposition. Growth mechanism, microstructure and optical properties of these nanowires will be dis-cussed in this talk.

Description

Keywords

Keywords: Compound semiconductors; GaAs; Growth mechanisms; InAs; InP; Metal-organic; Gallium alloys; Indium arsenide; Optical properties; Semiconductor growth; Nanowires

Citation

URI

http://hdl.handle.net/1885/30573

Collections

ANU Research Publications

Source

Compound Semiconductor Nanowires for Optoelectronic Device Applications

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PHOSST.2010.5553657

Restricted until

2037-12-31

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Description
01_Gao_Compound_Semiconductor_2011.pdf (187.51 KB)

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