Evolution of Epitaxial InAs Nanowires on GaAs (111)B

Date

2009

Authors

Zhang, Xin
Zou, Jin
Paladugu, Mohanchand
Guo, YaNan
Wang, Yong
Kim, Yong
Joyce, Hannah J
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Wiley-VCH Verlag GMBH

Abstract

A systematic investigation of the Au catalyst-assisted growth of epitaxial InAs nanowires (NW) on GaAs substrates was presented. Scanning electron microscopy (SEM) images of InAs NWs with different growth times show no vertical NWs in the sample with 1 min growth of InAs. High resolution transmission electron microscopy (HRTEM) investigations performed at the trace/substrate interface to determine the strain status show many misfit dislocations at the InAs/GaAs interface. The interfacial energy of InAs/Au is found to be higher than that of GaAs/Au, and these energetic considerations result in the Au catalysts retaining contact with GaAs. Vertical NWs initiate at trace intersections where the Au catalysts can not retain interfaces with the GaAs substrate. HRTEM image showing the junction between the base and InAs trace clearly present the epitaxially grown base on the InAs trace.

Description

Keywords

Keywords: Catalysis; Catalysts; Crystal growth; Electric wire; Epitaxial growth; High resolution transmission electron microscopy; Indium arsenide; Interfacial energy; Nanowires; Phase interfaces; Scanning electron microscopy; Semiconducting gallium; Semiconducting Epitaxy; GaAs; InAs; Interfacial energy; Nanowires

Citation

Source

Small

Type

Journal article

Book Title

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DOI

10.1002/smll.200800690

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