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The effect of the annealing ramp rate on the formation of voids in silicon

Date

Authors

Ruffell, Simon

Simpson, Peter J

Knights, Andrew P

Publisher

Institute of Physics Publishing

Abstract

We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C

Keywords

Keywords: Annealing; Defects; Ion implantation; Positron annihilation spectroscopy; Annealing ramp; Ion channeling; Open-volume defects; Ramp rates; Silicon

URI

http://hdl.handle.net/1885/30964

Collections

ANU Research Publications

Source

Journal of Physics: Condensed Matter

Type

Journal article

DOI

10.1088/0953-8984/19/46/466202

Restricted until

2037-12-31

Downloads

File

Description

01_Ruffell_The_effect_of_the_annealing_2007.pdf (305.5 KB)