The effect of the annealing ramp rate on the formation of voids in silicon
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Ruffell, Simon
Simpson, Peter J
Knights, Andrew P
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Institute of Physics Publishing
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We show the strong dependence on annealing ramp rate of residual open-volume defects in silicon following helium ion implantation and annealing. Helium was implanted at 60keV energy, 1 × 1016cm-2 fluence into silicon and subsequently annealed to 800 °C
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Journal of Physics: Condensed Matter
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2037-12-31
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