Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies
Date
2008-06-09
Authors
Bozanic, A.
Majlinger, Z.
Petravic, M.
Gao, Q.
Llewellyn, D.
Crotti, C.
Yang, Y.-W.
Journal Title
Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1sphotoemissionspectra.
Description
Keywords
Keywords: Absorption; Absorption spectroscopy; Binding energy; Complexation; Electric conductivity; Electromagnetic wave absorption; Energy absorption; Law enforcement; Luminescence of organic solids; Molecules; Nitrogen; Photoelectricity; Photoemission; Semiconduc
Citation
Collections
Source
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Type
Journal article