Characterization of molecular nitrogen in III-V compound semiconductors by near-edge x-ray absorption fine structure and photoemission spectroscopies

Date

2008-06-09

Authors

Bozanic, A.
Majlinger, Z.
Petravic, M.
Gao, Q.
Llewellyn, D.
Crotti, C.
Yang, Y.-W.

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Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Formation of molecular nitrogen under low-energy nitrogen bombardment of III-V compound semiconductor surfaces has been studied by photoemissionspectroscopy around N 1s core-level and near-edge x-ray absorption fine structure(NEXAFS) around NK edge. Interstitial molecular nitrogen N₂ has been formed in all of the samples under consideration. The presence of N₂ produces a sharp resonance in low-resolution NEXAFSspectra, showing the characteristic vibrational fine structure in high-resolution measurements, and at the same time, a new peak, shifted toward higher binding energies for several eV, in all N 1sphotoemissionspectra.

Description

Keywords

Keywords: Absorption; Absorption spectroscopy; Binding energy; Complexation; Electric conductivity; Electromagnetic wave absorption; Energy absorption; Law enforcement; Luminescence of organic solids; Molecules; Nitrogen; Photoelectricity; Photoemission; Semiconduc

Citation

Source

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Type

Journal article

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DOI

10.1116/1.2929851

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