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Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs

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Date

2012

Authors

Sun, W
Guo, Y.
Xu, Hong-Yi
Liao, Zhi-Ming
Zou, Jin
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.

Description

Keywords

Keywords: GaAs; GaAs(001); P-distribution; Gallium arsenide; Microelectronics; Semiconducting gallium; Nanowires

Citation

URI

http://hdl.handle.net/1885/59784

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472403

Restricted until

2037-12-31

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01_Sun_Unequal_P_distribution_in_2012.pdf (268.86 KB)

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