Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
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Authors
Sun, W
Guo, Y.
Xu, Hong-Yi
Liao, Zhi-Ming
Zou, Jin
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
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COMMAD 2012 Proceedings
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2037-12-31
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