Influence of Electron Diffraction on Measured Energy-resolved Momentum Densities in Single-crystalline Silicon

Date

2003

Authors

Vos, Maarten
Kheifets, Anatoli
Sashin, Vladimir
Weigold, Erich

Journal Title

Journal ISSN

Volume Title

Publisher

Pergamon-Elsevier Ltd

Abstract

Electron momentum spectroscopy is used to determine the spectral function of silicon single crystals. In these experiments 50 keV electrons impinge on a self-supporting thin silicon film and scattered and ejected electrons emerging from this sample with energies near 25 keV are detected in coincidence. Diffraction effects are present that give rise to additional structures in the measured spectral momentum densities. Spectra for a specific momentum value can be obtained at different orientations of the crystal relative to the analysers. By comparing these spectra for which the measured momentum density is the same, but the diffraction conditions of the incoming and outgoing electron trajectories differ, one can distinguish between features due to diffraction of the incoming and/or outgoing electrons, and those due to the electronic structure of the target itself.

Description

Keywords

Keywords: Electron diffraction; Electronic structure; Single crystals; Electron trajectories; Semiconducting silicon C. Electron; Diffraction

Citation

Source

Journal of Physics and Chemistry of Solids

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.jpcs.2003.08.004

Restricted until

2037-12-31