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Gold nanowires from silicon nanowire templates

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dc.contributor.authorWong, T. C.
dc.contributor.authorLi, C. P.
dc.contributor.authorZhang, R. Q.
dc.contributor.authorLee, S. T.
dc.date.accessioned2015-11-03T05:33:50Z
dc.date.available2015-11-03T05:33:50Z
dc.date.issued2004-01-19
dc.description.abstractWe report a simple method for producing goldnanowires (AuNWs) by using siliconnanowires (SiNWs) as templates. Uniform AuNWs were formed in the core of SiNWs, when SiNWs coated with Au were furnaceannealed at ∼880 °C at 10⁻² Torr.Transmission electron microscopy(TEM) examination showed the AuNWs had diameters of ∼10 nm. High-resolution TEM revealed lattice fringes with an interlayer spacing of 0.235 nm, which corresponds to the spacing in Au crystal, confirming the AuNWs are crystalline.en_AU
dc.description.sponsorshipThe work described in this letter is supported by two grants from the Research Grants Council of the Hong Kong SAR, China ~Project No. 8730016, e.g., CityU 3/01C; Project No. 9040633, e.g., CityU 1011/01P!, and by a grant from the Chinese Academy of Sciences, China.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16252
dc.publisherAmerican Institute of Physics (AIP)en_AU
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/11/15). Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1641179en_AU
dc.sourceApplied Physics Lettersen_AU
dc.titleGold nanowires from silicon nanowire templatesen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue3en_AU
local.bibliographicCitation.startpage407en_AU
local.contributor.affiliationWong, T C , City University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationLi, Chi, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationZhang, R Q , City University of Hong Kong, Hong Kongen_AU
local.contributor.affiliationLee, S T , City University of Hong Kong, Hong Kongen_AU
local.contributor.authoruidu4191553en_AU
local.description.notesImported from ARIES. At the time of publication the author Li, Chi was affiliated with City University of Hong Kong.en_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationU4047546xPUB150en_AU
local.identifier.citationvolume84en_AU
local.identifier.doi10.1063/1.1641179en_AU
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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