Damping mechanism in the novel La 2 Mo 2 O 9 -based oxide-ion conductors

Date

2003

Authors

Fang, Q F
Wang, Xinmei
Zhang, Guishan
Yi, Zhiguo

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

In this paper, the microscopic diffusion mechanism of oxygen vacancies in the oxygen-ion conductors La2-xAxMo2O9 with A = Bi, K and x = 0-0.15 are studied by the low frequency internal friction measurements. An internal friction peak associated with the phase transition around 833 K and two relaxation peaks associated with the short-distance diffusion of oxygen vacancies were observed in all samples. With increasing K and Bi doping contents, the activation energies of both relaxation peaks increase; the high-temperature peak decreases in height while the other relaxation peak increases. The phase transition can be completely suppressed by 10% K or 15% Bi doping. It is found that the effect of K-doping is stronger than that of Bi-doping. Combining with the analysis of the crystal structure of La2Mo2O9, the microscopic mechanism of oxygen vacancy diffusion for the two relaxation peaks are suggested.

Description

Keywords

Keywords: Activation energy; Crystal structure; Damping; Diffusion; Doping (additives); Electric conductors; Friction; Ionic conduction; Phase transitions; Point defects; Relaxation processes; Strain; Oxygen pumps; Lanthanum compounds Ionic conduction; Point defects; Strain

Citation

Source

Journal of Alloys and Compounds

Type

Journal article

Book Title

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DOI

10.1016/S0925-8388(03)00278-0

Restricted until

2037-12-31