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Two-photon luminescence study of optically trapped InP semiconductor nanowires

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Date

2011

Authors

Wang, Fan
Paiman, Suriati
Gao, Qiang
Jagadish, Chennupati
Reece, Peter
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

We report the two-photon luminescence emission (2PE) study of single indium phosphide (InP) semiconductor nanowire trapped in a gradient force optical tweezers. Nanowires studied were zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from 1 to 10 μm. Our results show that the band-edge emission from two-photon absorption of nanowires trapped in solution is strong and enhanced, compared with 2PE in InP bulk material. Besides, a distinct blue shift was observed between single-photon luminescence emission (1PE) spectra and 2PE spectra.

Description

Keywords

Keywords: Band-edge emissions; Blue shift; Bulk materials; Gradient force; InP; Luminescence emission; Mixed phase; Semiconductor nanowire; Two-photon absorptions; Two-photon luminescence; Wurtzites; Zinc blende; Indium phosphide; Luminescence; Nanowires; Optical f

Citation

URI

http://hdl.handle.net/1885/83478

Collections

ANU Research Publications

Source

2011 Int. Quantum Electron. Conf., IQEC 2011 and Conf. Lasers and Electro-Optics, CLEO Pacific Rim 2011 Incorporating the Australasian Conf. Optics, Lasers and Spectroscopy and the Australian Conf.

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/IQEC-CLEO.2011.6193994

Restricted until

2037-12-31

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01_Wang_Two-photon_luminescence_study_2011.pdf (533.59 KB)

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