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Enhancement of the Etch Rate of CVD Diamond by Prior C and Ge Implantation

Date

Authors

Leech, P W

Reeves, G K

Holland, A S

Ridgway, Mark C

Shanks, F

Publisher

Elsevier

Abstract

Polycrystalline diamond films have been irradiated with C+ or Ge+ ions at doses in the range 5 × 1013-5 × 1015 ions/cm2. Analysis of the implanted surfaces by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased

Keywords

Keywords: Carbon; Chemical vapor deposition; Germanium; Raman spectroscopy; Etch rates; Diamond films; etching Diamond films; Etching; Ion implantation; Raman spectroscopy

URI

http://hdl.handle.net/1885/91623

Collections

ANU Research Publications

Source

Diamond and Related Materials

Type

Journal article

DOI

10.1016/S0925-9635(02)00049-3

Restricted until

2037-12-31

Downloads

File

Description

01_Leech_Enhancement_of_the_Etch_Rate_2002.pdf (105.52 KB)