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Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

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dc.contributor.authorZhang, Feng
dc.contributor.authorLiu, Xinjun
dc.contributor.authorLi, Xiaomin
dc.contributor.authorGao, Xiangdong
dc.contributor.authorWu, Liang
dc.contributor.authorZhuge, Fuwei
dc.contributor.authorWang, Qun
dc.contributor.authorYang, Rui
dc.contributor.authorHe, Yong
dc.date.accessioned2015-12-10T23:18:06Z
dc.date.issued2012
dc.date.updated2016-02-24T09:57:09Z
dc.description.abstractIn this study, unipolar resistive switching (URS) characteristics in ZnO thin film memory devices were systematically investigated with variable defect content. ZnO films displayed typically URS behavior while oxygen-deficient ZnO 1-x films did not show resistive switching effects. The devices with two intentional Ohmic interfaces still show URS. These results show that appearance of URS behavior can be dominated by initial oxygen vacancy content in ZnO thin films. Modest increase in oxygen vacancy content in ZnO films will lead to forming-free and narrower distributions of switching parameters (set and reset voltage, high and low resistance states). It indicates that controlling the initial oxygen vacancy content was an effective method to enhance the URS performance.
dc.identifier.issn0038-1098
dc.identifier.urihttp://hdl.handle.net/1885/65473
dc.publisherPergamon-Elsevier Ltd
dc.sourceSolid State Communications
dc.subjectKeywords: Defect contents; Low-resistance state; Reset voltage; Resistive switching; Switching parameters; Vacancy content; ZnO; ZnO films; ZnO thin film; Defects; Optical films; Oxygen vacancies; Switching systems; Zinc oxide; Metallic films A. Thin film; A. Zinc oxide; D. Resistive switching
dc.titleEffect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices
dc.typeJournal article
local.bibliographicCitation.issue17
local.bibliographicCitation.lastpage1634
local.bibliographicCitation.startpage1630
local.contributor.affiliationZhang, Feng, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Xiaomin, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGao, Xiangdong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationWu, Liang, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationZhuge, Fuwei, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationWang, Qun, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationYang, Rui, National Institute for Materials Science
local.contributor.affiliationHe, Yong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100604 - Memory Structures
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationU3488905xPUB1111
local.identifier.citationvolume152
local.identifier.doi10.1016/j.ssc.2012.04.073
local.identifier.scopusID2-s2.0-84864487436
local.identifier.thomsonID000307697000003
local.type.statusPublished Version

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