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Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer

Date

Authors

Chai, XuZhao

Zhang, Yun

Liu, Bin

Xie, ZiLi

Han, Ping

Ye, Jiandong

Hu, LiQun

Xiu, XiangQian

Zhang, R.

Zheng, Youdou

Publisher

Springer-Verlag Berlin Heidelberg

Abstract

Effect of the V/III ratio during buffer layer growth on the yellow and blue luminescence in undoped GaN epilayer has been studied by means of photoluminescence spectroscopy and high resolution X-ray diffraction. It is found that the densities of screw and

Keywords

Keywords: Blue luminescence; Buffer layer growth; Edge threading; High resolution X ray diffraction; Intensity ratio; Threading dislocation; V/III ratio; Yellow luminescence; Buffer layers; Epilayers; Gallium nitride; Luminescence; Photoluminescence spectroscopy; S blue luminescence; V/III ratio; yellow luminescence

URI

http://hdl.handle.net/1885/77729

Collections

ANU Research Publications

Source

Science China Physics, Mechanics and Astromony

Type

Journal article

DOI

10.1007/s11433-013-5190-6

Restricted until

2037-12-31

Downloads

File

Description

01_Chai_Effect_of_the_V/III_ratio_2013.pdf (69.5 KB)

02_Chai_Effect_of_the_V/III_ratio_2013.pdf (573.29 KB)

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