A Partially Depleted Absorber Photodiode with Graded Doping Injection Regions
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Authors
Li, Xiao-Lei
Li, N
Demiguel, S
Zheng, X
Campbell, J C
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
A partially depleted absorber photodiode with graded absorption injection regions is reported. The 880-nm-thick In0.53Ga0.47As absorption region consists of a depletion layer and graded n- and p-type undepleted injection regions. Under backside illumination at 1.55-μm wavelength, an 8-μm-diameter photodiode exhibited an increase in bandwidth with increasing photocurrent. A saturation current bandwidth product of 990 mA · GHz and a responsivity of 0.67 A/W were achieved.
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IEEE Photonics Technology Letters