The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties
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Jolley, Greg
Lu, Hao Feng
Fu, Lan
Rao Tatavarti, Sudersena
Jagadish, Chennupati
Tan, Hark Hoe
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Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.
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Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)
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2037-12-31
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