Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

The influence of InGaAs quantum dots on GaAs P-I-N solar cell dark current properties

Thumbnail Image

Date

2011

Authors

Jolley, Greg
Lu, Hao Feng
Fu, Lan
Rao Tatavarti, Sudersena
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

An analysis of the temperature dependent dark current and spectral response characteristics of an In0.5Ga0.5As/GaAs quantum dot solar cell has been performed to determine the dominant physical processes that lead to a reduction of the open circuit voltage compared with reference single junction GaAs solar cells.

Description

Keywords

Keywords: Current properties; GaAs; GaAs solar cells; InGaAs quantum dots; Physical process; Quantum dot solar cells; Single junction; Spectral response characteristics; Temperature dependent; Gallium arsenide; Open circuit voltage; Photovoltaic effects; Semiconduc

Citation

URI

http://hdl.handle.net/1885/60347

Collections

ANU Research Publications

Source

Proceedings of IEEE Photovoltaic Specialists Conference (PVSC 2011)

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PVSC.2011.6186006

Restricted until

2037-12-31

Downloads

File
Description
01_Jolley_The_influence_of_InGaAs_2011.pdf (1.82 MB)

DSpace software copyright © 2002-2026 LYRASIS