Study of intermixing mechanism in AlInGaAs/InGaAs quantum well
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Du, Si
Fu, Lan
Jagadish, Chennupati
Tan, Hark Hoe
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IEEE
Abstract
In this work, controlled band gap modifications in AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. X-ray photoelectron spectroscopy was used to investigate the interfacial reaction between the quantum well structure and dielectric capping layer.
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Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
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2037-12-31
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