Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

On the cyclic indentation behavior of crystalline silicon with a sharp tip

dc.contributor.authorFujisawa, N.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorSwain, M. V.
dc.date.accessioned2016-04-19T00:37:19Z
dc.date.available2016-04-19T00:37:19Z
dc.date.issued2007
dc.date.updated2016-06-14T09:18:10Z
dc.description.abstractDetailed cyclic indentation experiments of crystalline silicon in this study show interesting behavior depending on the end phase from the previous cycle. To enable the behavior of these phases to be studied on reloading, the cyclic indentation response of the material is examined under conditions where the pressure-induced Si-II phase transforms either to amorphous (a-Si) or high pressure Si-XII/Si-III phases on unloading. For an amorphous end phase the subsequent reloading is hysteretic, and for high pressure crystalline end phases it is elastic. This indicates that, whereas a-Si re-transforms readily to Si-II upon reloading, Si-XII/Si-III does not retransform to Si-II even at the maximum indentation load. Based on the concept of the effective indenter shape and stresses induced in the material, we show that Si-XII/Si-III has a greater critical hydrostatic pressure for retransformation to Si-II than that of the diamond cubic Si-I.
dc.description.sponsorshipThe authors would like to acknowledge WRiota Pty Ltd. and the Australian Research Council for funding this project.en_AU
dc.identifier.issn0884-2914en_AU
dc.identifier.urihttp://hdl.handle.net/1885/101057
dc.publisherCambridge University Press
dc.rights© Materials Research Society 2007
dc.sourceJournal of Materials Research
dc.subjectSi
dc.subjectCrystalline
dc.subjectAmorphous
dc.titleOn the cyclic indentation behavior of crystalline silicon with a sharp tip
dc.typeJournal article
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.lastpage2997en_AU
local.bibliographicCitation.startpage2992en_AU
local.contributor.affiliationFujisawa, Naoki, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSwain, Michael Vincent, University of Sydney, Australiaen_AU
local.contributor.authoruidu4338303en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationu8709800xPUB66en_AU
local.identifier.citationvolume22en_AU
local.identifier.doi10.1557/JMR.2007.0406en_AU
local.identifier.scopusID2-s2.0-36549080971
local.publisher.urlhttp://www.cambridge.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

License bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description: