Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Amorphous (In 2 O 3 ) x (Ga 2 O 3 ) y (ZnO) 1-x-y thin films with high mobility fabricated by pulsed laser deposition

Date

Authors

Su, Xueqiong

Wang, Li

Sun, Rui

Bao, Chuancheng

Lu, Yi

Wang, Rongping

Publisher

Elsevier

Abstract

We prepared a series of (In2O3)x(Ga 2O3)y(ZnO)1-x-y (0.7 ≤ x ≤ 0.8, 0.05 ≤ y ≤ 0.15) (IGZO) thin films using the pulsed laser deposition (PLD) method at room temperature under same oxygen pressure. The structural, optical and electrical properties

Keywords

Keywords: Amorphous phase; Device fabrications; Flexible substrate; High mobility; Narrow band gap; Optical and electrical properties; Room temperature; Transmitted spectra; Amorphous materials; Electric properties; Gallium; Pulsed laser deposition; Thin films; X r Amorphous; High mobility; IGZO films; Pulsed laser deposition

URI

http://hdl.handle.net/1885/74013

Collections

ANU Research Publications

Source

Applied Surface Science

Type

Journal article

DOI

10.1016/j.apsusc.2013.06.036

Restricted until

2037-12-31

Downloads

File

Description

01_Su_Amorphous_(In_2_O_3_)_x_(Ga_2_2013.pdf (1.05 MB)

02_Su_Amorphous_(In_2_O_3_)_x_(Ga_2_2013.pdf (1.05 MB)

abcd