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Unequal P distribution in nanowires and the planar layer during GaAsP growth on GaAs {111} B by metal-organic chemical vapor deposition

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Date

2013

Authors

Sun, W
Guo, YaNan
Xu, Hong-Yi
Liao, Zhi-Ming
Gao, Qiang
Jagadish, Chennupati
Zou, Jin
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

In this study, the behavior of P incorporation GaAsP during ternary nanowires epitaxial growth is investigated. Detailed electron microscopy investigations indicate that (1) the P concentration in the nanowires is higher than that in the simultaneously gr

Description

Keywords

Keywords: Compositional control; GaAs; GaAs substrates; Metal-organic; Misfit strains; P-distribution; Planar layers; Precursor decomposition; Epitaxial growth; Gallium arsenide; Metallorganic chemical vapor deposition; Nanowires

Citation

URI

http://hdl.handle.net/1885/74886

Collections

ANU Research Publications

Source

Journal of Physical Chemistry C

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/jp406294t

Restricted until

2037-12-31

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01_Sun_Unequal_P_distribution_in_2013.pdf (2.77 MB)

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