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Formation and Electronic Structure of Germanium Nanocrystals formed by Ion Beam Synthesis

Date

Authors

Glover, Christopher

Ridgway, Mark C

Llewellyn, David

Kluth, Patrick

Johannessen, Bernt

Publisher

Elsevier

Abstract

Germanium nanocrystals embedded in SiO2 have been formed by ion implantation and subsequent thermal annealing. Ge74 ions were implanted utilising ion energy/dose combinations to yield a uniform Ge excess of ∼5 at.% over the implanted layer. Subsequent t

Keywords

Keywords: Dosimeters; Electronic structure; Germanium; Ion implantation; Quantum theory; Silicon compounds; Ion energy; Nanocrystal size; Quantum confinement; Nanostructured materials

URI

http://hdl.handle.net/1885/73731

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2005.06.218

Restricted until

2037-12-31

Downloads

File

Description

01_Glover_Formation_and_Electronic_2005.pdf (194.6 KB)