Variation of ion-irradiation induced strain as a function of ion fluence in Si
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Authors
Raghuveerasamy, Lakshmanasamy
Hatt, Stephanie
Kluth, Patrick
Kluth, Susan
Dogra, Rakesh
Ridgway, Mark C
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Elsevier
Abstract
Strain in Si induced by ion irradiation at temperatures of 200-400 °C has been measured at room temperature. Quantitative analysis of the strain distribution produced by 750-keV Si ion implantation in Si substrates was characterized by double-crystal X-r
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Nuclear Instruments and Methods in Physics Research: Section B
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2037-12-31