Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Indentation-induced damage in GaN epilayers

Simple item page
dc.contributor.authorBradby, J. E.
dc.contributor.authorKucheyev, S. O.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorSwain, M. V.
dc.contributor.authorMunroe, P.
dc.contributor.authorLi, G.
dc.contributor.authorPhillips, M. R.
dc.date.accessioned2015-10-20T05:50:33Z
dc.date.available2015-10-20T05:50:33Z
dc.date.issued2002-01-21
dc.date.updated2016-02-24T09:48:33Z
dc.description.abstractThe mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by spherical indentation, cross-sectional transmission electron microscopy (XTEM), and scanning cathodoluminescence(CL) monochromatic imaging. CL imaging of indents which exhibit plastic deformation (based on indentation data) shows an observable “footprint” of deformation-produced defects that result in a strong reduction in the intensity of CL emission. Multiple discontinuities are observed during loading when the maximum load is above the elastic-plastic threshold, and such a behavior can be correlated with multiple slip bands revealed by XTEM. No evidence of pressure-induced phase transformations is found from within the mechanically damaged regions using selected-area diffraction patterns. The main deformation mechanism appears to be the nucleation of slip on the basal planes, with dislocations being nucleated on additional planes on further loading. XTEM reveals no cracking or delamination in any of the samples studied for loads of up to 250 mN.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15983
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 20/10/15). Copyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1436280
dc.sourceApplied Physics Letters
dc.subjectKeywords: Basal planes; Cross-sectional transmission electron microscopy; Damaged region; Deformation mechanism; Elastic-Plastic; GaN epilayers; Maximum load; Mechanical deformation; Monochromatic imaging; Multiple slips; Pressure-induced phase transformations; Sap
dc.titleIndentation-induced damage in GaN epilayers
dc.typeJournal article
local.bibliographicCitation.issue3en_AU
local.bibliographicCitation.lastpage385en_AU
local.bibliographicCitation.startpage383en_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationSwain, Michael Vincent, University of Sydney, Australiaen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd, Chinaen_AU
local.contributor.affiliationPhillips, Matthew R, University of Technology Sydney, Australiaen_AU
local.contributor.authoruidu9908195en_AU
local.description.notesImported from ARIESen_AU
local.description.refereedYes
local.identifier.absfor020204en_AU
local.identifier.ariespublicationMigratedxPub2832en_AU
local.identifier.citationvolume80en_AU
local.identifier.doi10.1063/1.1436280en_AU
local.identifier.scopusID2-s2.0-79956019122
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

Downloads

Original bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
01_Bradby_Indentation-induced_damage_in_2002.pdf
Size:
519.17 KB
Format:
Adobe Portable Document Format
Download

License bundle

Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
884 B
Format:
Item-specific license agreed upon to submission
Description:
Download

Collections

ANU Research Publications

DSpace software copyright © 2002-2026 LYRASIS