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Polycrystallization and Surface Erosion of Amorphous GaN During Elevated Temperature Ion Bombardment

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Date

2000

Authors

Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Zou, Jin
Li, Gang

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion implantation are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Amorphous layers annealed in vacuum at 500°

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Keywords

Citation

URI

http://hdl.handle.net/1885/89280

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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