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Redistribution of Boron in Silicon after Ne+ Postirradiation and Thermal Annealing

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Date

2000

Authors

Fink, Dietmar
Szimkowiak, P
Hu, Xiao-Zhi
Ho, Joshua
Vacik, J
Chadderton, Lewis

Journal Title

Journal ISSN

Volume Title

Publisher

Gordon and Breach

Abstract

Silicon wafers were implanted with 200 keV B+ ions up to 5 × 1014 cm-2 fluence, then postirradiated with 75-650 keV Ne+ ions at different fluences up to a near-constant damage level, and finally furnace annealed up to 500°C. The change in the boron dept

Description

Keywords

Keywords: Boron; Computer simulation; Furnace annealing; Implantation; Intersticialcy mechanism; Neon; Neutron depth profiling; Radiation enhanced diffusion; Range distributions; Silicon; Surface precipitation

Citation

URI

http://hdl.handle.net/1885/89800

Collections

ANU Research Publications

Source

Radiation Effects and Defects in Solids

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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Description
01_Fink_Redistribution_of_Boron_in_2000.pdf (1.04 MB)

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