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Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing

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Date

2014

Authors

Gao, Qian
Saxena, Dhruv
Wang, Fan
Fu, Lan
Mokkapati, Sudha
Guo, Yanan
Li, Li (Lily)
Wong-Leung, Jennifer
Caroff, Philippe
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally determine a quantum efficiency of μ50%, which is on par w

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/61268

Collections

ANU Research Publications

Source

Nano Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/nl5021409

Restricted until

2037-12-31

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01_Gao_Selective-Area_Epitaxy_of_Pure_2014.pdf (284.72 KB)

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