Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

Nanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications

dc.contributor.authorNaureen, Shagufta
dc.contributor.authorRajagembu, Perumal
dc.contributor.authorSanatinia, Reza
dc.contributor.authorShahid, Naeem
dc.contributor.authorLi, Mingyu
dc.contributor.authorAnand, S
dc.coverage.spatialBerlin
dc.date.accessioned2015-12-10T23:19:28Z
dc.date.createdMay 22-26 2011
dc.date.issued2011
dc.date.updated2016-02-24T09:57:44Z
dc.description.abstractWe demonstrate a simple and cost effective method to fabricate InP nanopillars using silica particles as masks for etching InP. Oxygen plasma treatment of InP surfaces before dispersion of colloidal mask particles improved surface wettability significantly and helped in uniform coverage of the particles over large areas. Pillars with varied sizes were fabricated by dispersing colloidal SiO2 with different sizes on the sample and/or by reducing size of particles after dispersion. Nanopillars with different heights and shapes from near cylindrical to conical were obtained by varying etch process parameters and by progressive erosion of colloidal SiO2 particle (mask). Pillars with aspect ratios in excess of 15:1 have been obtained. Investigations are also made on regular close packed hexagonal structures with wide area coverage. Size reduction of colloidal particles after dispersion is used to overcome the lag effect observed in the etching of close packed structures. The demonstrated nanostructuring method is attractive for producing photonic crystals and antireflecting surfaces in solar cells.
dc.identifier.isbn9781457717536
dc.identifier.urihttp://hdl.handle.net/1885/65927
dc.publisherIEEE
dc.relation.ispartofseries2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011
dc.sourceConference Proceedings - International Conference on Indium Phosphide and Related Materials
dc.subjectKeywords: Close packed; Close packed structures; Colloidal lithography; Colloidal masks; Colloidal particle; Cost-effective methods; Different heights; Different sizes; Etch process; Hexagonal structures; ICP etching; InP; Lag effects; Nano-structuring; Nanopillars
dc.titleNanostructuring of InP by colloidal lithography and ICP etching for photovoltaic applications
dc.typeConference paper
local.contributor.affiliationNaureen, Shagufta, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRajagembu, Perumal, KTH Royal Institute of Technology
local.contributor.affiliationSanatinia, Reza, KTH-Royal Institute of Technolog
local.contributor.affiliationShahid, Naeem, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Mingyu, Royal Institute of Technology
local.contributor.affiliationAnand, S, KTH-Royal Institute of Technology
local.contributor.authoruidNaureen, Shagufta, u5447495
local.contributor.authoruidShahid, Naeem, u5312347
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assembly
local.identifier.ariespublicationU3488905xPUB1186
local.identifier.scopusID2-s2.0-84863231917
local.type.statusPublished Version

Downloads

Original bundle

Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
01_Naureen_Nanostructuring_of_InP_by_2011.pdf
Size:
660.51 KB
Format:
Adobe Portable Document Format