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Characterization of palladium-related defects in silicon

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dc.contributor.authorDogra, R
dc.contributor.authorByrne, Aidan
dc.contributor.authorBrett, David Alisdair
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-10T21:57:48Z
dc.date.available2015-12-10T21:57:48Z
dc.date.issued2007
dc.date.updated2015-12-09T07:48:36Z
dc.description.abstractUsing 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.
dc.identifier.issn0304-3843
dc.identifier.urihttp://hdl.handle.net/1885/39939
dc.publisherKluwer Academic Publishers
dc.sourceHyperfine Interactions
dc.subjectKeywords: Defects; Electric field gradient; Palladium; Perturbed angular correlation; Silicon
dc.titleCharacterization of palladium-related defects in silicon
dc.typeJournal article
local.bibliographicCitation.lastpage37
local.bibliographicCitation.startpage33
local.contributor.affiliationDogra, R, Beant College of Engineering and Technology
local.contributor.affiliationByrne, Aidan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBrett, David Alisdair, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidByrne, Aidan, u8900906
local.contributor.authoruidBrett, David Alisdair, u4025007
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.notesImported from ARIES
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB186
local.identifier.citationvolume177
local.identifier.doi10.1007/s10751-008-9618-8
local.identifier.scopusID2-s2.0-54249145571
local.type.statusPublished Version

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