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Growth and characterization of GaAx 1-x Sb x nanowires

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Date

2012

Authors

yuan, xiaoming
Parkinson, Patrick
Wong-Leung, Jennifer
Breuer, Steffan
Gao, Qiang
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report the structural and optical characterization of GaAs 1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.

Description

Keywords

Keywords: Defect-free; Emission efficiencies; GaAs(111); Metal-organic chemical vapour depositions; Microphotoluminescence; Nanowires (NWs); Structural and optical characterizations; Zinc blende; Gallium arsenide; Microelectronics; Nanowires; Semiconducting gallium

Citation

URI

http://hdl.handle.net/1885/59808

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472400

Restricted until

2037-12-31

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