Modeling Photoluminescence Spectra in Heavily Boron Doped Silicon

Abstract

This work aims to establish an empirical model to describe the relationship between boron doping concentrations in uniformly doped crystalline silicon wafers and their photoluminescence spectra measured at liquid nitrogen temperatures. The range of doping concentrations measured is between 1 × 10{{17}}~{{mathrm {cm}}} {{-3}} and 1.1 × 10{{20}}~{{mathrm {cm}}} {{-3}}. Combinations of Gaussian curves are used to construct the photoluminescence spectra with satisfactory accuracy, and the fitting parameters are expressed as empirical functions of the doping concentrations. This work will lay the foundation for future efforts to probe the dopant concentration and depth profile of thermally boron diffused silicon samples using photoluminescence spectra. Show more