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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

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dc.contributor.authorDao, Lap Vanen_AU
dc.contributor.authorGal, Michaelen_AU
dc.contributor.authorCarmody, Cen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.date.accessioned2010-05-04T02:02:00Zen_US
dc.date.accessioned2010-12-20T06:03:18Z
dc.date.available2010-05-04T02:02:00Zen_US
dc.date.available2010-12-20T06:03:18Z
dc.date.issued2000-11-01en_US
dc.date.updated2015-12-12T08:40:55Z
dc.description.abstractWe have compared the time integrated photoluminescence (PL) and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.
dc.format3 pages
dc.identifier.citationJournal of Applied Physics 88.9 (2000): 5252-5254
dc.identifier.issn0021-8979en_US
dc.identifier.issn1089-7550en_US
dc.identifier.urihttp://hdl.handle.net/10440/1028en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/10440/1028
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2000 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)
dc.sourceJournal of Applied Physics
dc.source.urihttp://link.aip.org/link/JAPIAU/v88/i9/p5252/s1en_US
dc.subjectindium compounds
dc.subjectgallium arsenide
dc.subjectIII-V semiconductors
dc.subjectsemiconductor quantum wells
dc.subjectphotoluminescence
dc.subjectcarrier lifetime
dc.subjection implantation
dc.subjecttime resolved spectra
dc.subjectcarrier relaxation time
dc.titleA comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
dc.typeJournal article
dcterms.dateAccepted2000-08-09en_US
local.bibliographicCitation.lastpage5254
local.bibliographicCitation.startpage5252
local.contributor.affiliationDao, Lap Van, Swinburne University of Technology
local.contributor.affiliationGal, Michael, University of New South Wales
local.contributor.affiliationCarmody, C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidE7596en_US
local.contributor.authoruidEx92en_US
local.contributor.authoruidU9905516en_US
local.contributor.authoruidU9302338en_US
local.contributor.authoruidU9212349en_US
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub18701en_US
local.identifier.citationvolume88
local.identifier.doi10.1063/1.1314904
local.identifier.scopusID2-s2.0-0038703868
local.type.statusPublished Versionen_US

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