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Wideband transition between rectangular waveguide and microstrip using asymmetric fin line probe

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dc.contributor.authorLi, Jian
dc.contributor.authorHuang, Yongjun
dc.contributor.authorLI, Yi
dc.contributor.authorWen, Guangjun
dc.contributor.authorXiao, Fulin
dc.date.accessioned2019-11-21T23:35:38Z
dc.date.issued2017
dc.date.updated2019-05-12T08:20:51Z
dc.description.abstractA novel wideband waveguide-to-microstrip transition realised by inserting asymmetric fin line probe into metallic rectangular waveguide is presented. One back-to-back transition covering the Ka band is designed, fabricated and tested to show the advantages of such asymmetric fin line-probe inspired transition structure, and measured results consist well with simulations. An insertion loss less than 0.8 dB and a return loss better than 15 dB over 24-40 GHz are obtained for the back-to-back structure. This broadband fin line-probe transition between rectangular waveguide and microstrip can be used widely in microwave and millimetre-wave circuit and system.en_AU
dc.description.sponsorshipThis work was supported in part by National Natural Science Foundation of China (grant nos. 61371047 and 61601093), Guangdong Provincial Science and Technology Planning Program of China (grant no. 2016A010101036), Sichuan Provincial Science and Technology Planning Program of China (grant no. 2016GZ0061) and Fundamental Research Funds for the Central Universities (grant no. ZYGX2015J002).en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn0013-5194en_AU
dc.identifier.urihttp://hdl.handle.net/1885/186487
dc.language.isoen_AUen_AU
dc.publisherInstitution of Engineering and Technology (IET)en_AU
dc.rights© The Institution of Engineering and Technology 2017en_AU
dc.sourceElectronics Lettersen_AU
dc.titleWideband transition between rectangular waveguide and microstrip using asymmetric fin line probeen_AU
dc.typeJournal articleen_AU
local.bibliographicCitation.issue7en_AU
local.bibliographicCitation.lastpage492en_AU
local.bibliographicCitation.startpage490en_AU
local.contributor.affiliationLi, Jian, University of Electronic Science and Technology of Chinaen_AU
local.contributor.affiliationHuang, Yongjun, University of Electronic Science and Technology of Chinaen_AU
local.contributor.affiliationLI, Yi, College of Engineering and Computer Science, ANUen_AU
local.contributor.affiliationWen, Guangjun, University of Electronic Science and Technology of Chinaen_AU
local.contributor.affiliationXiao, Fulin, University of Electronic Science and Technology of Chinaen_AU
local.contributor.authoruidLI, Yi, u5000272en_AU
local.description.embargo2037-12-31
local.description.notesImported from ARIESen_AU
local.identifier.absfor090607 - Power and Energy Systems Engineering (excl. Renewable Power)en_AU
local.identifier.absseo861603 - Integrated Circuits and Devicesen_AU
local.identifier.ariespublicationu4485658xPUB973en_AU
local.identifier.citationvolume53en_AU
local.identifier.doi10.1049/el.2016.3629en_AU
local.identifier.scopusID2-s2.0-85016421506
local.identifier.thomsonID000398693500028
local.publisher.urlhttps://www.theiet.org/en_AU
local.type.statusPublished Versionen_AU

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