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Rapid Amorphization in In x Ga 1-x As Alloys at Temperatures between 15 K and 300 K

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dc.contributor.authorWesch, Werner
dc.contributor.authorWendler, E
dc.contributor.authorHussain, Zohair
dc.contributor.authorKluth, Susan
dc.contributor.authorRidgway, Mark C
dc.date.accessioned2015-12-13T23:03:45Z
dc.date.issued2006
dc.date.updated2015-12-12T07:51:01Z
dc.description.abstractThe amorphization kinetics of In0.53Ga0.47As and In0.20Ga0.80As alloys has been investigated in comparison to its binary extremes as a function of the Ge ion fluence at room temperature and 15 K. The irradiated samples were analysed by means of Rutherford backscattering-channeling spectroscopy using an in situ technique in case of the 15 K experiments. Contrary to the AlxGa1-xAs alloys, the system InxGa1-xAs does not exhibit amorphization kinetics intermediate between those of its two binary extremes especially at room temperature. For InxGa1-xAs a smaller ion fluence is necessary to render the material amorphous at room temperature than GaAs or InAs. This surprising behaviour is explained in terms of differences in the In-As and Ga-As bond-lengths leading to strain at the atomic scale. We suggest irradiation-induced defect clusters or amorphous nuclei in InxGa 1-xAs may serve to relieve residual strain and, consequently, retardation of dynamic annealing.
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/85065
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Amorphization; Annealing; Reaction kinetics; Rutherford backscattering spectroscopy; Sampling; Semiconductor materials; Strain; Bond-lengths; Ion fluence; Ion irradiation; Ternary alloys; Indium alloys Amorphization; Ion irradiation; Semiconductors; Ternary alloys
dc.titleRapid Amorphization in In x Ga 1-x As Alloys at Temperatures between 15 K and 300 K
dc.typeJournal article
local.bibliographicCitation.lastpage483
local.bibliographicCitation.startpage480
local.contributor.affiliationWesch, Werner, Friedrich Schiller University of Jena
local.contributor.affiliationWendler, E, Friedrich Schiller University of Jena
local.contributor.affiliationHussain, Zohair, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKluth, Susan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidHussain, Zohair, u3323957
local.contributor.authoruidKluth, Susan, u3565710
local.contributor.authoruidRidgway, Mark C, u9001886
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationMigratedxPub13266
local.identifier.citationvolume242
local.identifier.doi10.1016/j.nimb.2005.08.094
local.identifier.scopusID2-s2.0-28544447245
local.type.statusPublished Version

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