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Microchannel contacting of crystalline silicon solar cells

dc.contributor.authorBullock, James
dc.contributor.authorOta, Hiroki
dc.contributor.authorWang, Hanchen
dc.contributor.authorXu, Zhaoran
dc.contributor.authorHettick, Mark
dc.contributor.authorYan, Di
dc.contributor.authorSamundsett, Christian
dc.contributor.authorWan, Yimao
dc.contributor.authorEssig, S
dc.contributor.authorMorales-Masis, Monica
dc.contributor.authorCuevas, Andres
dc.contributor.authorJavey, Ali
dc.date.accessioned2020-12-20T20:57:19Z
dc.date.available2020-12-20T20:57:19Z
dc.date.issued2017
dc.date.updated2020-11-23T10:49:20Z
dc.description.abstractThere is tremendous interest in reducing losses caused by the metal contacts in silicon photovoltaics, particularly the optical and resistive losses of the front metal grid. One commonly sought-after goal is the creation of high aspect-ratio metal fingers which provide an optically narrow and low resistance pathway to the external circuit. Currently, the most widely used metal contact deposition techniques are limited to widths and aspect-ratios of ~40 μm and ~0.5, respectively. In this study, we introduce the use of a micropatterned polydimethylsiloxane encapsulation layer to form narrow (~20 μm) microchannels, with aspect-ratios up to 8, on the surface of solar cells. We demonstrate that low temperature metal pastes, electroless plating and atomic layer deposition can all be used within the microchannels. Further, we fabricate proof-of-concept structures including simple planar silicon heterojunction and homojunction solar cells. While preliminary in both design and efficiency, these results demonstrate the potential of this approach and its compatibility with current solar cell architectures.
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn2045-2322
dc.identifier.urihttp://hdl.handle.net/1885/218226
dc.language.isoen_AUen_AU
dc.publisherNature Publishing Group
dc.sourceScientific Reports
dc.titleMicrochannel contacting of crystalline silicon solar cells
dc.typeJournal article
local.bibliographicCitation.issue1
local.contributor.affiliationBullock, James, College of Engineering and Computer Science, ANU
local.contributor.affiliationOta, Hiroki, University of California
local.contributor.affiliationWang, Hanchen, University of California
local.contributor.affiliationXu, Zhaoran, University of California
local.contributor.affiliationHettick, Mark, University of California
local.contributor.affiliationYan, Di, College of Engineering and Computer Science, ANU
local.contributor.affiliationSamundsett, Christian, College of Engineering and Computer Science, ANU
local.contributor.affiliationWan, Yimao, College of Engineering and Computer Science, ANU
local.contributor.affiliationEssig, S, Karlsruhe Institute of Technology
local.contributor.affiliationMorales-Masis, Monica, Ecole Polytechnique Federale de Lausanne (EPFL)
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.contributor.affiliationJavey, Ali, Lawrence Berkeley National Laboratory
local.contributor.authoruidBullock, James, u4313019
local.contributor.authoruidYan, Di, u4299071
local.contributor.authoruidSamundsett, Christian, u9710649
local.contributor.authoruidWan, Yimao, u4793143
local.contributor.authoruidCuevas, Andres, u9308750
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.ariespublicationa383154xPUB8385
local.identifier.citationvolume7
local.identifier.doi10.1038/s41598-017-08913-y
local.identifier.scopusID2-s2.0-85028071862
local.identifier.thomsonID000408163000003
local.type.statusPublished Version

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