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Phase change behaviors of Zn-doped Ge2Sb2Te5 films

dc.contributor.authorWang, Guoxiang
dc.contributor.authorNie, Qiuhua
dc.contributor.authorShen, Xiang
dc.contributor.authorWang, R. P.
dc.contributor.authorWu, Liangcai
dc.contributor.authorFu, Jing
dc.contributor.authorXu, Tiefeng
dc.contributor.authorDai, Shixun
dc.date.accessioned2015-09-21T04:49:50Z
dc.date.available2015-09-21T04:49:50Z
dc.date.issued2012-08-01
dc.date.updated2016-02-24T09:00:05Z
dc.description.abstractThis work was financially supported by the Program for New Century Excellent Talents in University (Grant No. NCET-10-0976), the International Science & Technology Cooperation Program of China (Grant No. 2011DFA12040), the National Program on Key Basic Research Project (973 Program) (Grant No. 2012CB722703), the Natural Science Foundation of China (Grant Nos. 61008041 and 60978058), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y1090996), the Natural Science Foundation of Ningbo City, China (Grant No. 2011A610092), the Program for Innovative Research Team of Ningbo city (Grant No. 2009B21007), and sponsored by K. C. Wong Magna Fund in Ningbo University.
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15607
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.4742144
dc.sourceApplied Physics Letters
dc.subjectKeywords: A-center; Crystallization temperature; Data retention; Face centered cubic phase; FCC phase; Hexagonal close-packed; High thermal stability; Phase Change; Phase change films; Zn atoms; Germanium; Zinc
dc.titlePhase change behaviors of Zn-doped Ge2Sb2Te5 films
dc.typeJournal article
local.bibliographicCitation.issue5en_AU
local.bibliographicCitation.lastpage5)
local.bibliographicCitation.startpage051906en_AU
local.contributor.affiliationWang, Guoxiang, Chinese Academy of Sciences, Chinaen_AU
local.contributor.affiliationNie, Qiuhua, Ningbo University, Chinaen_AU
local.contributor.affiliationShen, Xiang, Ningbo University, Chinaen_AU
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National Universityen_AU
local.contributor.affiliationWu, Liangcai, Chinese Academy of Sciences, Chinaen_AU
local.contributor.affiliationFu, Jing, Ningbo University, Chinaen_AU
local.contributor.affiliationXu, Tiefeng, Ningbo University, Chinaen_AU
local.contributor.affiliationDai, Shixun, Ningbo University, Chinaen_AU
local.contributor.authoruidu4219061en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020400en_AU
local.identifier.absfor091200en_AU
local.identifier.absfor020500en_AU
local.identifier.ariespublicationf5625xPUB2521en_AU
local.identifier.citationvolume101en_AU
local.identifier.doi10.1063/1.4742144en_AU
local.identifier.scopusID2-s2.0-84864711002
local.identifier.thomsonID000307676600029
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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