Implant isolation of ZnO
dc.contributor.author | Kucheyev, S. O. | |
dc.contributor.author | Jagadish, C. | |
dc.contributor.author | Williams, J. S. | |
dc.contributor.author | Deenapanray, P. N. K. | |
dc.contributor.author | Yano, Mitsuaki | |
dc.contributor.author | Koike, Kazuto | |
dc.contributor.author | Sasa, Shigehiko | |
dc.contributor.author | Inoue, Masataka | |
dc.contributor.author | Ogata, Ken-ichi | |
dc.date.accessioned | 2015-10-15T00:09:05Z | |
dc.date.available | 2015-10-15T00:09:05Z | |
dc.date.issued | 2003-03-01 | |
dc.date.updated | 2015-12-12T08:35:49Z | |
dc.description.abstract | We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV ¹⁶Oions (up to ∼2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to temperatures of ∼300–400 °C. An analysis of the temperature dependence of sheet resistance suggests that effective levels associated with irradiation-produced defects are rather shallow (<50 meV). For the case of implantation with keV Cr, Fe, or Niions, the evolution of sheet resistance with annealing temperature is consistent with defect-induced isolation, with a relatively minor effect of Cr, Fe, or Ni impurities on the thermal stability of isolation. Results also reveal a negligible ion-beam flux effect in the case of irradiation with 2 MeV 16Oions, supporting high diffusivity of ion-beam-generated defects during ion irradiation and a very fast stabilization of collision cascade processes in ZnO. Based on these results, the mechanism for electrical isolation in ZnO by ion bombardment is discussed. | |
dc.identifier.issn | 0021-8979 | en_AU |
dc.identifier.uri | http://hdl.handle.net/1885/15925 | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1542939 | |
dc.source | Journal of Applied Physics | |
dc.subject | Keywords: Crystal defects; Crystal impurities; Ion bombardment; Ion implantation; Irradiation; Single crystals; Thermodynamic stability; Electrical isolation; Zinc oxide | |
dc.title | Implant isolation of ZnO | |
dc.type | Journal article | |
local.bibliographicCitation.issue | 5 | en_AU |
local.bibliographicCitation.lastpage | 2976 | en_AU |
local.bibliographicCitation.startpage | 2972 | en_AU |
local.contributor.affiliation | Kucheyev, Sergei O, Lawrence Livermore National Laboratory, United States of America | en_AU |
local.contributor.affiliation | Jagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Williams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Deenapanray, Prakash, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
local.contributor.affiliation | Yano, Mitsuaki, Osaka Institute of Technology, Japan | en_AU |
local.contributor.affiliation | Koike, Kazuto, Osaka Institute of Technology, Japan | en_AU |
local.contributor.affiliation | Sasa, Shigehiko, Osaka Institute of Technology, Japan | en_AU |
local.contributor.affiliation | Inoue, Makoto, National Astronomical Observatory of Japan, Japan | en_AU |
local.contributor.affiliation | Ogata, Ken Ichi, Osaka Institute of Technology , Japan | en_AU |
local.contributor.authoremail | sergei.kucheyev@anu.edu.au | en_AU |
local.contributor.authoruid | u9910365 | en_AU |
local.description.notes | Imported from ARIES | en_AU |
local.description.refereed | Yes | |
local.identifier.absfor | 090699 | en_AU |
local.identifier.ariespublication | MigratedxPub17963 | en_AU |
local.identifier.citationvolume | 93 | en_AU |
local.identifier.doi | 10.1063/1.1542939 | en_AU |
local.identifier.scopusID | 2-s2.0-0037352148 | |
local.identifier.uidSubmittedBy | u3488905 | en_AU |
local.publisher.url | https://www.aip.org/ | en_AU |
local.type.status | Published Version | en_AU |
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