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Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

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Date

2011

Authors

Liu, Xinjun
Biju, Kuyyadi P.
Lee, Joonmyoung
Park, Jubong
Kim, Seonghyun
Park, Sangsu
Shin, Jungho
Sadaf, Sharif Md.
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The concept of memristive filaments (MFs) is introduced, which is based on the memristors developed by the Hewlett-Packard group. The effects of key parameters on electrical properties are elucidated. The current-voltage features of bipolar and filamentary resistive switching are reproduced by using a parallel MF model with dynamic growth and rupture of multiple MFs. This model can be extended and adapted to most nanosized transition metal oxide memristors.

Description

Keywords

Keywords: Current voltage; Dynamic growth; Hewlett-packard; Key parameters; Nano-sized; Resistive switching; Transition-metal oxides; Memristors; Passive filters; Resistors; Switching systems; Transition metal compounds; Transition metals; Electric properties

Citation

URI

http://hdl.handle.net/1885/65556

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.3638486

Restricted until

2037-12-31

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01_Liu_Parallel_memristive_filaments_2011.pdf (1.19 MB)

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