Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

Abstract

Porous GaSb has been formed by Ga ion implantation into crystalline GaSb substrates at either room temperature or −180 °C. The morphology has been characterized using scanning electron microscopy and the atomic structure was determined using extended x-ray absorption fine structure spectroscopy. Room-temperature implantation at low fluences leads to the formation of ∼20-nm voids though the material remains crystalline. Higher fluences cause the microstructure to evolve into a network of amorphous GaSb rods ∼15 nm in diameter. In contrast, implantation at −180 °C generates large, elongated voids but no rods. Upon exposure to air, the surface of the porous material is readily oxidized yielding Ga₂O₃ and metallic Sb precipitates, the latter resulting from the reduction of unstable Sb₂O₃. We consider and discuss the atomic-scale mechanisms potentially operative during the concurrent crystalline-to-amorphous and continuous-to-porous transformations.