Open Research will be updating the system on Tuesday, 14 July 2026, from 8:15 to 9:00 AM. We apologise for any inconvenience caused.

Cultural advice

The Australian National University acknowledges, celebrates and pays our respects to the Ngunnawal and Ngambri people of the Canberra region and to all First Nations Australians on whose traditional lands we meet and work, and whose cultures are among the oldest continuing cultures in human history.

Aboriginal and Torres Strait Islander peoples are advised that ANU Library collections may include images, names, voices, and other representations of deceased persons.

Material in the collection may contain terms, language or views that reflect the period in which the item was created and may be considered inappropriate today.

III-V compound semiconductor nanowires

Thumbnail Image

Date

2009

Authors

Joyce, Hannah J
Paiman, Suriati
Gao, Qiang
Kim, Yong
Smith, Leigh M
Jackson, Howard E
Yarrison-Rice, Jan M
Zhang, Xin
Zou, Jin
Jagadish, Chennupati

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

GaAs and InP based nanowires were grown epitaxially on GaAs or InP (111)B substrates by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this talk, I will give an overview of nanowire research activities in our group. Especially, the effects of growth parameters for GaAs and InP nanowires on the crystal quality have been studied in detail. We demonstrated the ability to obtain defect-free GaAs nanowires and control the crystal structure of InP nanowires, ie, WZ or ZB, by choosing a combination of growth parameters, such as temperature, V/III ratio and nanowire diameter.

Description

Keywords

Keywords: Au nanoparticle; Crystal qualities; Defect-free; GaAs; Growth parameters; III-V compound semiconductor; InP; Metalorganic chemical vapor deposition; MOCVD; Research activities; V/III ratio; Chemical vapor deposition; Crystal structure; Electric wire; Fluo III-V compound semiconductors; MOCVD; Nanowires

Citation

URI

http://hdl.handle.net/1885/84144

Collections

ANU Research Publications

Source

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/NMDC.2009.5167572

Restricted until

2037-12-31

Downloads

File
Description
01_Joyce_III-V_compound_semiconductor_2009.pdf (294.74 KB)

DSpace software copyright © 2002-2026 LYRASIS

abcd