Can misfit dislocations be located above the interface of InAs/GaAs (001) epitaxial quantum dots?

Date

2012

Authors

Chen, Zi-Bin
Lei, Wen
Chen, Bin
Wang, Yan-Bo
Liao, Xiao-Zhou
Zou, Jin
Ringer, Simon Peter
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.

Description

Keywords

Keywords: Crystalline samples; Droplet epitaxy; InAs/GaAs; Interfacial structures; Substrate surface; Surface oxidations; Dislocations (crystals); Drops; Electron microscopes; Electron microscopy; Epitaxial growth; Oxidation; Semiconductor quantum dots Droplet epitaxy; Electron microscopy; Misfit dislocations; Oxidation; Quantum dot

Citation

Source

Nanoscale Research Letters

Type

Journal article

Book Title

Entity type

Access Statement

Open Access

License Rights

DOI

10.1186/1556-276X-7-486

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