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All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

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dc.contributor.authorCao, Xun
dc.contributor.authorLi, Xiaomin
dc.contributor.authorGao, Xiangdong
dc.contributor.authorLiu, Xinjun
dc.contributor.authorYang, Chang
dc.contributor.authorYang, Rui
dc.contributor.authorJin, Ping
dc.date.accessioned2015-12-10T23:18:12Z
dc.date.issued2011
dc.date.updated2016-02-24T09:57:12Z
dc.description.abstractA transparent resistance random access memory (RRAM) structure consisted of all-ZnO-based film is fabricated by the pulsed laser deposition method at room temperature. The device is based on transparent Mg-doped ZnO films, sandwiched by Al-doped ZnO as electrodes. Reliable and reproducible bipolar resistance memory switching performances are achieved. Fast and stable switching behaviour in the voltage pulse mode is demonstrated with set and reset durations of 50 ns and 100 ns, respectively. The transmittance of the device is from 64% to 82% in the visible region. All-ZnO-based transparent RRAM will open a route towards see-through memory devices.
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/1885/65520
dc.publisherInstitute of Physics Publishing
dc.sourceJournal of Physics D: Applied Physics
dc.subjectKeywords: Al-doped ZnO; Memory switching; Mg-doped; Resistance random access memory; Room temperature; Visible region; Voltage pulse; ZnO films; Electric potential; Pulsed laser deposition; Zinc oxide; Random access storage
dc.titleAll-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
dc.typeJournal article
local.bibliographicCitation.issue25
local.contributor.affiliationCao, Xun, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLi, Xiaomin, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationGao, Xiangdong, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationLiu, Xinjun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationYang, Chang, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationYang, Rui, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.affiliationJin, Ping, Chinese Academy of Sciences, Shanghai Institute of Ceramics
local.contributor.authoruidLiu, Xinjun, u5361480
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor100705 - Nanoelectronics
local.identifier.absseo861603 - Integrated Circuits and Devices
local.identifier.ariespublicationU3488905xPUB1118
local.identifier.citationvolume44
local.identifier.doi10.1088/0022-3727/44/25/255104
local.identifier.scopusID2-s2.0-79958816910
local.type.statusPublished Version

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