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Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

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Date

2002-11-04

Authors

Deenapanray, P. N. K.
Martin, A.
Doshi, S.
Jagadish, C.
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We have used capacitance–voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925 °C. Two electrically active defects HA (EV+0.39 eV) and HB2 (EV+0.54 eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of galliumvacancies causes segregation of Zndopant atoms and Cu towards the surface of IFD samples. The atomic relocation process is critically assessed in terms of the application of IFD to the band gap engineering of doped GaAs-based heterostructures.

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Keywords

Keywords: Atomic relocation; Band gap engineering; Capacitance voltage; Dopant atoms; Doping concentration; Electrically active defects; P-type GaAs; Atoms; Deep level transient spectroscopy; Doping (additives); Gallium arsenide; Impurities; Power quality; Semicond

Citation

URI

http://hdl.handle.net/1885/15950

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

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DOI

10.1063/1.1519728

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