III-V Semiconductor Nanowire Photodetectors
Abstract
III-V semiconductor nanowires have been
demonstrated as potential candidates for infrared
photodetection due to their unique morphology, optical and
electrical properties as well as direct and tunable bandgap.
Here our study on the fabrication and characterization of III-V
nanowire infrared photodetectors is reviewed.
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Restricted until
2099-12-31
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