Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

Date

2019-08-13

Authors

Zhang, Xutao
Li, Ziyuan
Yao, Xiaomei
Huang, Hai
Wei, Dongdong
Zhou, Chen
Tang, Zhou
Yuan, Xiaoming
Chen, Ping Ping
Hu, Weida

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.

Description

Keywords

InAs nanowires, MBE, field-effect transistor, surface trapping states, rewritable nonvolatile memory

Citation

ACS Appl. Electron. Mater. 2019, 1, 9, 1825–1831

Source

ACS Applied Electronic Materials

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1021/acsaelm.9b00368

Restricted until

2037-12-31