Effect of boron on interstitial-related luminescence centers in silicon
Date
Authors
Charnvanichborikarn, Supakit
Villis, Byron
Johnson, Brett
Wong-Leung, Jennifer
McCallum, Jeffrey C.
Williams, James
Jagadish, Chennupati
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Journal ISSN
Volume Title
Publisher
American Institute of Physics (AIP)
Abstract
Photoluminescence measurements have been used to investigate the optically active defect centers formed by silicon implantation and a subsequent anneal at 275, 400, or 525°C. The presence of boron in p-type silicon is found to produce deleterious effects
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Source
Applied Physics Letters