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Unexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing

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dc.contributor.authorHaberl, Bianca
dc.contributor.authorBogle, S. N.
dc.contributor.authorLi, T.
dc.contributor.authorMcKerracher, I.
dc.contributor.authorRuffell, S.
dc.contributor.authorMunroe, P.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorAbelson, J. R.
dc.contributor.authorBradby, J. E.
dc.date.accessioned2015-11-12T05:48:47Z
dc.date.available2015-11-12T05:48:47Z
dc.date.issued2011-11-07
dc.date.updated2016-02-24T10:37:58Z
dc.description.abstractWe investigate the structure of magnetron-sputtered (MS) amorphous silicon(a-Si) prepared under standard deposition conditions and compare this to pure ion-implanted (II) a-Si. The structure of both films is characterized in their as-prepared and thermally annealed states. Significant differences are observed in short- and medium-range order following thermal annealing. Whereas II a-Si undergoes structural relaxation toward a continuous random network, MS a-Si exhibits little change. Cross-sectional transmission electron microscopy reveals the presence of nanopores in the MS film consistent with reduced mass-density. Therefore, the short- and medium-range order of annealed, MS a-Si is tentatively attributed to these pores.
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16485
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/11/15). Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3658628
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Amorphous silicon (a-Si); Annealed state; Continuous random networks; Cross sectional transmission electron microscopy; Deposition conditions; Medium range order; Thermal-annealing; Annealing; Crystal atomic structure; Film preparation; Magnetrons; Silico
dc.titleUnexpected short- and medium-range atomic structure of sputtered amorphous silicon upon thermal annealing
dc.typeJournal article
local.bibliographicCitation.issue9en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage096104en_AU
local.contributor.affiliationHaberl, Bianca, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationBoyle, Stephanie N, University of Illinois at Urbana-Champaign, United States of Americaen_AU
local.contributor.affiliationLi, Tony, University of Illinois at Urbana-Champaign, United States of Americaen_AU
local.contributor.affiliationMcKerracher, Ian, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationAbelson, J R, University of Illinois at Urbana-Champaign, United States of Americaen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4284509en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.absseo970102en_AU
local.identifier.ariespublicationu4153526xPUB57en_AU
local.identifier.citationvolume110en_AU
local.identifier.doi10.1063/1.3658628en_AU
local.identifier.scopusID2-s2.0-81355136080
local.identifier.thomsonID000297062100141
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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