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Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge

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dc.contributor.authorHickey, D. P.
dc.contributor.authorBryan, Z. L.
dc.contributor.authorJones, K. S.
dc.contributor.authorElliman, R. G.
dc.contributor.authorHaller, E. E.
dc.date.accessioned2015-12-14T05:40:17Z
dc.date.available2015-12-14T05:40:17Z
dc.date.issued2007-03-28
dc.date.updated2016-02-24T11:43:02Z
dc.description.abstractGeimplanted with 1MeV Si⁺ at a dose of 1×10¹⁵cm⁻² creates a buried amorphous layer that, upon regrowth, exhibits several forms of defects–end-of-range (EOR), regrowth-related, and clamshell defects. Unlike Si, no planar {311} defects are observed. The minimal EOR defects are small dotlike defects and are very unstable, dissolving between 450 and 550°C. This is in contrast to Si, where the EOR defects are very stable. The amorphous layer results in both regrowth-related defects and clamshell defects, which were more stable than the EOR damage.
dc.description.sponsorshipThis work is supported by Semiconductor Research Corporation Contract No. 00057787.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95011
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2717538
dc.sourceApplied Physics Letters
dc.subjectKeywords: Clamshell defects; Defect formation; Dotlike defects; Amorphization; Defect structures; Growth (materials); Positive ions; Amorphous materials
dc.titleRegrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge
dc.typeJournal article
local.bibliographicCitation.issue13en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage132114en_AU
local.contributor.affiliationHickey, D P , University of Florida , United States of Americaen_AU
local.contributor.affiliationBryan, Z L, University of Florida, United States of Americaen_AU
local.contributor.affiliationJones, K S , University of Florida , United States of Americaen_AU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationHaller, E E, University of California, United States of Americaen_AU
local.contributor.authoruidu9012877en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationu8709800xPUB31en_AU
local.identifier.citationvolume90en_AU
local.identifier.doi10.1063/1.2717538en_AU
local.identifier.scopusID2-s2.0-34047155037
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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