Strain effects in ZnO layers deposited on 6H-SiC
Date
2006-09-27
Authors
Ashrafi, A. B. M. A.
Segawa, Y.
Shin, K.
Yao, T.
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American Institute of Physics (AIP)
Abstract
Correlation in crystallite sizes and defects of epitaxialZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of ∼400nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking faults that appear due to imbalanced interface chemistry in the II-VI/IV materials system, together with the complex impurity matrix. These defects are the main source of nonradiative recombination centers in ZnOepitaxy resulting in shorter exciton lifetimes examined in time-resolved photoluminescence measurements.
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Journal of Applied Physics
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