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Strain effects in ZnO layers deposited on 6H-SiC

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Date

2006-09-27

Authors

Ashrafi, A. B. M. A.
Segawa, Y.
Shin, K.
Yao, T.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

Correlation in crystallite sizes and defects of epitaxialZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of ∼400nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking faults that appear due to imbalanced interface chemistry in the II-VI/IV materials system, together with the complex impurity matrix. These defects are the main source of nonradiative recombination centers in ZnOepitaxy resulting in shorter exciton lifetimes examined in time-resolved photoluminescence measurements.

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Citation

URI

http://hdl.handle.net/1885/16362

Collections

ANU Research Publications

Source

Journal of Applied Physics

Type

Journal article

Book Title

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DOI

10.1063/1.2345021

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