Effective silicon surface passivation by atomic layer deposited Al 2 O 3 /TiO 2 stacks

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dc.contributor.authorSuh, Dong Chul
dc.contributor.authorWeber, Klaus
dc.date.accessioned2015-12-10T23:32:34Z
dc.date.issued2014
dc.date.updated2015-12-10T11:20:40Z
dc.description.abstractIn this work atomic layer deposition of Al2O3 and TiO2 has been used to obtain dielectric stacks for passivation of silicon surfaces. Our experiments on n- and p-type silicon wafers deposited by thin Al2O3/TiO2 stacks show that a considerably improved passivation is obtained compared to the Al2O3 single layer. For Al2O3 films thinner than 20 nm the emitter saturation current density decreases with increasing TiO2 thickness. Especially the passivation of ultrathin (∼5 nm) Al2O3 is very effectively enhanced by TiO2 due to a decreased interface defect density as well as an increased fixed negative charge in the stacks. Hence, the thin Al2O3/TiO2 stacks developed in this work can be used as a passivation coating for Si-based solar cells.
dc.identifier.issn1862-6254
dc.identifier.urihttp://hdl.handle.net/1885/68886
dc.publisherWiley-VCH Verlag GMBH
dc.sourcePhysica Status Solidi: Rapid Research Letters
dc.titleEffective silicon surface passivation by atomic layer deposited Al 2 O 3 /TiO 2 stacks
dc.typeJournal article
local.bibliographicCitation.issue1
local.bibliographicCitation.lastpage43
local.bibliographicCitation.startpage40
local.contributor.affiliationSuh, Dong Chul, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.authoremailu9116880@anu.edu.au
local.contributor.authoruidSuh, Dong Chul, u5074214
local.contributor.authoruidWeber, Klaus, u9116880
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020400 - CONDENSED MATTER PHYSICS
local.identifier.ariespublicationU3488905xPUB1856
local.identifier.citationvolume8
local.identifier.doi10.1002/pssr.201308134
local.identifier.scopusID2-s2.0-84892849698
local.identifier.thomsonID000331086600005
local.identifier.uidSubmittedByU3488905
local.type.statusPublished Version

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