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Experimental Determination of the Uncertainty of the Absorption Coefficient of Crystalline Silicon

dc.contributor.authorSchinke, Carsten
dc.contributor.authorPeest, P. Christian
dc.contributor.authorBothe, Karsten
dc.contributor.authorSchmidt, Jan
dc.contributor.authorBrendel, Rolf
dc.contributor.authorVogt, Malte R.
dc.contributor.authorKroger, Ingo
dc.contributor.authorWinter, Stefan
dc.contributor.authorSchirmacher, Alfred
dc.contributor.authorLim, Siew Yee
dc.contributor.authorNguyen, Hieu
dc.contributor.authorMacDonald, Daniel
dc.date.accessioned2016-02-24T22:41:31Z
dc.date.issued2015
dc.date.updated2016-02-24T10:12:29Z
dc.description.abstractBased on a combined analysis of spectroscopic ellipsometry, reflectance and transmittance measurements as well as spectrally resolved luminescence measurements and spectral responsivity measurements, we present data of the coefficient of band-to-band absorption of crystalline silicon at 295 K in the wavelength range 250 - 1450 nm. A systematic measurement uncertainty analysis according to the "Guide to the Expression of Uncertainty in Measurements" (GUM) is carried out for each method, showing that the relative uncertainty of the absorption coefficient data so determined is of the order of 0.3% at 300 nm, 1% at 900 nm, 10% at 1200 nm and 180% at 1450 nm. The data are consolidated by comparison of measurements carried out independently at different institutions. The uncertainty of solar cell energy conversion predictions by means of simulations due to the uncertainty of the absorption coefficient data is shown to be of the order of 0.1% relative.
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/1885/98719
dc.publisherElsevier
dc.sourceEnergy Procedia
dc.titleExperimental Determination of the Uncertainty of the Absorption Coefficient of Crystalline Silicon
dc.typeJournal article
local.bibliographicCitation.lastpage178
local.bibliographicCitation.startpage170
local.contributor.affiliationSchinke, Carsten, Institute for Solar Energy Research Hamelin
local.contributor.affiliationPeest, P. Christian, Institute for Solar Energy Research Hamelin (ISFH)
local.contributor.affiliationBothe, Karsten, Institute for Solar Energy Research Hameln (ISFH)
local.contributor.affiliationSchmidt, Jan , Institute for Solar Energy Research Hameln (ISFH)
local.contributor.affiliationBrendel, Rolf, Institute for Solar Energy Research Hamelin (ISFH)
local.contributor.affiliationVogt, Malte R., Leibniz University of Hanover (LUH)
local.contributor.affiliationKroger, Ingo, Physikalisch-Technische Bundesanstalt (PTB)
local.contributor.affiliationWinter, Stefan, Physikalisch-Technische Bundesanstalt (PTB)
local.contributor.affiliationSchirmacher, Alfred, Physikalisch-Technische Bundesanstalt (PTB)
local.contributor.affiliationLim, Siew Yee, College of Engineering and Computer Science, ANU
local.contributor.affiliationNguyen, Hieu, College of Engineering and Computer Science, ANU
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.authoruidLim, Siew Yee, u4799476
local.contributor.authoruidNguyen, Hieu, u5247402
local.contributor.authoruidMacDonald, Daniel, u9718154
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090000 - ENGINEERING
local.identifier.absfor090600 - ELECTRICAL AND ELECTRONIC ENGINEERING
local.identifier.ariespublicationU3488905xPUB6859
local.identifier.citationvolume77
local.identifier.doi10.1016/j.egypro.2015.07.025
local.identifier.scopusID2-s2.0-84948407800
local.type.statusPublished Version

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