The unification of filament and interfacial resistive switching mechanisms for titanium dioxide based memory devices

Abstract

Reversible and controllable conversion between unipolar and bipolar resistive switching (URS and BRS) was observed in Pt/TiO2/Pt memory devices. The URS and BRS of this device exhibited different low resistance states but shared the same high resistance state. The conduction mechanisms of low resistance states in URS and BRS are Ohmic conduction and electrons tunneling, respectively, while the high resistance state is controlled by Schottky barrier formed at the top interface of Pt/TiO2. The temperature dependence of resistance states indicates Magnéli phase filaments formed in URS. A unified model was then proposed to demonstrate the unification of filament and interfacial switching mechanisms. Show more